Mechanical and Strain Sensors in Instrumentation

Instruments 5.1

Imron Rosyadi

Learning Objectives

By the end of this session, you should be able to:

  1. Explain what mechanical variables (displacement, level, strain) are and why industry cares about them.
  2. Describe the operating principles of:
    • Potentiometric displacement sensors
    • Capacitive and inductive displacement sensors
    • LVDTs (linear variable differential transformers)
    • Level sensors (float, capacitive, ultrasonic, pressure-based)
  3. Apply basic formulas for capacitors, stress–strain, and strain gauges.
  4. Analyze and design simple signal‑conditioning circuits:
    • Potentiometer + op amp
    • Capacitive/inductive bridge circuits (conceptually)
    • Strain gauge bridges (1‑arm, 2‑arm, 4‑arm)
  5. Work through quantitative examples involving displacement, level, and strain/load cell measurements.

Why Mechanical Sensors Matter in ECE

Mechanical phenomena are everywhere in process control and automation:

  • Positions of valves, robot arms, and conveyor items
  • Levels of liquids/solids in tanks and silos
  • Stresses in beams, bridges, machine parts
  • Forces and weights in hoppers, scales, and presses

Key idea: We rarely measure these variables directly in volts or amps. Instead, we use a sensor to convert a mechanical quantity → electrical signal.

Tip

Think of sensors as “translators” between the physical world and your electronics.

Mechanical Variables in this Session

We will focus on three broad classes:

  1. Displacement, Location, Position
    • Linear/rotational position
    • Used in: CNC machines, robotic joints, valve stems, pressure gauges
  2. Level
    • Height of a liquid or solid in a container
    • Used in: tanks, silos, chemical reactors, fuel gauges
  3. Strain (and related stress)
    • Microscopic deformation of solids under load
    • Hidden inside: pressure sensors, load cells, accelerometers, flow meters

2. Displacement, Location, or Position Sensors

Industrial needs to measure “where things are”:

  • Object position on a conveyor
  • Orientation of heavy steel plates in a rolling mill
  • Liquid/solid level (a special kind of displacement)
  • Position of a workpiece in an automatic milling machine
  • Pressure → diaphragm deflection → displacement

We’ll look at three major electrical transduction mechanisms:

  1. Resistive (potentiometric)
  2. Capacitive / inductive
  3. Variable‑reluctance (LVDT)

2.1 Potentiometric Displacement Sensors – Concept

A potentiometric displacement sensor (potentiometer) uses a movable wiper on a resistor.

  • A resistive element with total resistance \(R\) between terminals 1 and 2
  • A wiper connected to an arm (mechanical linkage) at terminal 3
  • As the arm moves, the wiper slides along the resistor
  • The resistance between 3 and either end changes with position

Figure 1 Potentiometric displacement sensor.

Limitations:

  • Mechanical wear and friction of the wiper
  • Limited resolution in wire‑wound types (step size = spacing between turns)
  • Electrical noise from sliding contact

Potentiometer Resolution

In a wire‑wound potentiometer:

  • Distance between turns: \(\Delta x\)
  • Change in resistance between adjacent positions: \(\Delta R\)

The smallest resolvable displacement is roughly \(\Delta x\), assuming electronics can detect the resistance step \(\Delta R\).

  • More turns → smaller \(\Delta x\) → better resolution
  • But: more turns = higher resistance or longer device

Example 1 – Problem

Problem:

A potentiometric displacement sensor measures workpiece motion from 0 to \(10\ \mathrm{cm}\). The resistance changes linearly from 0 to \(1\ \mathrm{k}\Omega\) over this range.

Design signal conditioning that provides a linear 0–10 V output proportional to displacement.

Constraints:

  • Do not destroy the linearity between resistance and displacement.
  • Allowed tools: op‑amp circuits, DC references.

Example 1 – Why Not a Simple Divider?

If we put the variable resistor directly in a divider like this:

Vs --- R_fixed --- R_sensor --- GND
               |
             Vout

Then \[ V_\text{out} = V_s \frac{R_\text{sensor}}{R_\text{fixed} + R_\text{sensor}} \]

This is nonlinear in \(R_\text{sensor}\) because of the denominator. So even if \(R_\text{sensor} \propto x\), you’ll get a nonlinear \(V_\text{out}(x)\).

We need a configuration where \(V_\text{out}\) is directly proportional to \(R_\text{sensor}\).

Example 1 – Solution Strategy (Op‑Amp)

Use the fact that for an inverting amplifier:

\[ V_\text{out} = -\frac{R_2}{R_1} V_\text{in} \]

If we put the sensor as \(R_2\) (feedback resistor), then \(V_\text{out} \propto R_\text{sensor}\) (linearly).

We can:

  • Use a constant input voltage \(V_\text{in} =\) constant
  • Feed back through the variable resistance \(R_2 = R_\text{sensor}\)
  • Choose \(R_1\) to scale the output to 0–10 V over \(R_\text{sensor} = 0\)\(1\ \mathrm{k}\Omega\)

Example 1 – Detailed Solution

Use an inverting amplifier with:

  • \(R_2 = R_\text{sensor}\) (0 to \(1\ \text{k}\Omega\))
  • \(R_1\) fixed
  • \(V_\text{in} = -5.1\ \text{V}\) from a Zener diode reference

Then \[ V_\text{out} = -\frac{R_2}{R_1} V_\text{in} \]

We want \(V_\text{out} = +10\ \text{V}\) at \(R_2 = 1000\ \Omega\):

\[ 10 = -\frac{1000}{R_1}(-5.1) \Rightarrow R_1 = 510\ \Omega \]

So:

  • At 0 cm: \(R_2 \approx 0 \Rightarrow V_\text{out} \approx 0\ \text{V}\)
  • At 10 cm: \(R_2 = 1\ \text{k}\Omega \Rightarrow V_\text{out} = 10\ \text{V}\)

Circuit:

Figure 2 Circuit for Example 1.

2.2 Capacitive and Inductive Displacement Sensors

These sensors use changes in:

as a function of displacement.

Common features:

  • No sliding contacts → less wear than potentiometers
  • Often higher resolution and better repeatability
  • Usually require AC excitation and more complex signal conditioning

Capacitive Displacement Sensors – Basic Formula

For a parallel‑plate capacitor:

\[ C = K \varepsilon_0 \frac{A}{d} \]

where:

  • \(K\) = relative dielectric constant (air ≈ 1, many liquids ≫ 1)
  • \(\varepsilon_0 = 8.85\ \mathrm{pF/m}\) (permittivity of free space)
  • \(A\) = overlapping plate area
  • \(d\) = separation between plates

So we can sense displacement by changing:

  1. Distance \(d\) between plates
  2. Area \(A\) that overlaps
  3. Dielectric constant \(K\) (e.g., changing fluid level)

Figure 3 Capacity varies with plate spacing and shared area.

Alternative geometry.

Example 2 – Cylindrical Capacitive Sensor

A capacitive displacement sensor monitors small workpiece motion:

  • Two metal cylinders, separated by plastic (thickness \(d = 1\ \mathrm{mm}\))
  • Dielectric constant of plastic at \(1\ \text{kHz}\): \(K = 2.5\)
  • Radius of cylinders: \(r = 2.5\ \text{cm}\)
  • Overlap height (insertion depth) \(h\) changes with position

Tasks:

  1. Find sensitivity \(\dfrac{dC}{dh}\) in \(\mathrm{pF/m}\).
  2. Find capacity range if \(h\) varies from \(1.0\) to \(2.0\ \mathrm{cm}\).

Figure 4 Capacitive-displacement sensor for Example 2.

Example 2 – Solution

The overlapping cylindrical surface area is:

\[ A = 2\pi r h \]

So

\[ C = K\varepsilon_0 \frac{A}{d} = 2\pi K\varepsilon_0 \frac{rh}{d} \]

Sensitivity to \(h\):

\[ \frac{dC}{dh} = 2\pi K\varepsilon_0 \frac{r}{d} \]

Substitute:

  • \(K = 2.5\)
  • \(\varepsilon_0 = 8.85\ \mathrm{pF/m}\)
  • \(r = 2.5\times 10^{-2}\ \mathrm{m}\)
  • \(d = 10^{-3}\ \mathrm{m}\)

\[ \frac{dC}{dh} = 2\pi(2.5)(8.85\ \mathrm{pF/m})\frac{2.5\times10^{-2}}{10^{-3}} \approx 3475\ \mathrm{pF/m} \]

Because \(C\) is linear in \(h\):

  • At \(h = 1.0\ \text{cm} = 10^{-2}\ \text{m}\): \(C_\text{min} = 34.75\ \mathrm{pF}\)
  • At \(h = 2.0\ \text{cm} = 2\times 10^{-2}\ \text{m}\): \(C_\text{max} = 69.50\ \mathrm{pF}\)

Where Are Capacitive Sensors Used in ECE?

  • Precision displacement measurement (micrometers to millimeters)
  • Micro‑machined accelerometers and MEMS devices
  • Touch screens and proximity sensors
  • Level sensing in process tanks (using change in dielectric)

They usually feed into:

  • AC bridges
  • Oscillator frequency‑shift circuits
  • Capacitance‑to‑digital converters

Inductive Displacement Sensors

If we slide a permeable core into a coil:

  • Inductance \(L\) increases because magnetic path permeability increases
  • Each core position gives a different inductance

Used as displacement sensors by:

  • Exciting the coil with AC
  • Measuring changes in:
    • Coil impedance
    • Bridge balance
    • Oscillator frequency

Figure 5 Variable-reluctance displacement sensor.

Differences vs. capacitive:

  • Based on magnetic rather than electric fields
  • Often less sensitive to contamination or humidity
  • Need ferromagnetic cores and careful shielding

2.3 Variable‑Reluctance & LVDT – Principle

A variable‑reluctance sensor uses moving ferromagnetic parts to change magnetic flux linking two or more coils.

Most important type: LVDT – Linear Variable Differential Transformer.

Structure:

  • One primary coil (center)
  • Two secondary coils (symmetric, series‑opposed)
  • Movable ferromagnetic core slides inside

Primary excited by AC → flux couples into secondaries.

Figure 6 LVDT structure.

Key effect:

  • Core centered → both secondary voltages equal → differential = 0
  • Core displaced → one secondary > other → nonzero differential AC voltage
  • The amplitude is proportional to displacement; phase indicates direction

LVDT Transfer Characteristic

Figure 7 LVDT secondary voltage amplitude vs displacement.

Properties:

  • Around the center position, \(V_\text{diff} \approx kx\) (highly linear)
  • Typical linearity: within \(\pm 0.25\%\) over specified range
  • Polarity (phase) tells you which side of center the core is on
  • Resolution limited mainly by your ability to measure small voltages

LVDT Signal Conditioning – Simple and Practical

Simple rectifier scheme

  • Differential secondary → rectifier → low‑pass filter
  • Produces a bipolar DC output vs. core displacement

Figure 8 Simple LVDT detection circuit.

Limitation:

  • Needs differential amplitude above diode drops → not as sensitive.

Practical IC‑based scheme

  • On‑chip AC source for LVDT primary
  • Phase‑sensitive detector (PSD)
  • Filters and amplifier to yield clean bipolar DC

Figure 9 Practical LVDT signal-conditioning IC.

Example 3 – LVDT Output & Nonlinearity

Given:

  • Maximum core motion: \(\pm 1.5\ \text{cm}\)
  • Linearity: \(\pm 0.3\%\) over that range
  • Transfer function: \(23.8\ \mathrm{mV/mm}\)

Used to track motion from \(x = -1.2\) to \(+1.4\ \text{cm}\).

  1. Find expected output voltages.
  2. Find uncertainty in position due to nonlinearity.

Example 3 – Solution

  1. Voltage at \(-1.2\ \text{cm}\) (i.e., \(-12\ \text{mm}\)):

\[ V(-1.2\ \text{cm}) = 23.8\ \mathrm{mV/mm} \times (-12\ \text{mm}) = -285.6\ \text{mV} \]

  1. Voltage at \(+1.4\ \text{cm}\) (\(+14\ \text{mm}\)):

\[ V(1.4\ \text{cm}) = 23.8\ \mathrm{mV/mm} \times (14\ \text{mm}) = 333\ \text{mV} \]

  1. Linearity uncertainty

Given linearity \(\pm 0.3\%\), the effective transfer function varies by:

\[ \Delta k = \pm 0.003 \times 23.8\ \mathrm{mV/mm} = \pm 0.0714\ \mathrm{mV/mm} \]

So an observed voltage \(V_m\) could correspond to:

\[ x_\text{min} = \frac{V_m}{23.87},\quad x_\text{max} = \frac{V_m}{23.73} \quad [\text{mm}] \]

For \(V_m = 333\ \text{mV}\):

  • \(x_\text{min} \approx 13.9506\ \text{mm} = 1.39506\ \text{cm}\)
  • \(x_\text{max} \approx 14.0329\ \text{mm} = 1.40329\ \text{cm}\)

So position uncertainty is about \(\pm 0.3\%\), as specified.

2.4 Level Sensors – Overview

Level measurement is essentially displacement measurement of a fluid or solid surface.

Common methods:

  1. Mechanical float + linkage → potentiometer, LVDT, etc.
  2. Electrical contact / resistance probes
  3. Capacitive (concentric cylinders as a capacitor)
  4. Ultrasonic (time of flight)
  5. Pressure‑based (hydrostatic pressure at bottom → level)

Level Sensing – Mechanical vs Electrical

Mechanical float

  • Float rides on fluid level
  • Linked to:
    • Potentiometer
    • LVDT core
  • Simple and robust

Figure 10a Float‑based level measurement.

Capacitive concentric cylinder

  • Two cylinders form a capacitor
  • Space between partly filled with liquid, partly air
  • Acts like two capacitors in parallel:
    • Liquid with \(K_\text{liquid}\)
    • Air with \(K \approx 1\)

Figure 10b Capacitive level measurement.

Ultrasonic Level Measurement

Non‑contact level measurement using ultrasonic pulses:

  • Transmitter \(T\) emits burst of ultrasound
  • Wave reflects from material surface
  • Receiver \(R\) detects echo
  • Time of flight \(\Delta t\) → distance \(d\) using \(d = v_\text{sound}\Delta t/2\)

Two configurations:

Figure 11a Above‑surface ultrasonic level measurement.

Solid or liquid, above surface.

Figure 11b Below‑surface ultrasonic level measurement.

Below surface mounting for liquids.

Also widely used in ranging (parking sensors, drones).

Example 4 – Capacitive Level Sensing with Ethyl Alcohol

We measure ethanol level 0–5 m using the concentric cylinder capacitor:

  • Dielectric constants:
    • Air: \(K = 1\)
    • Ethyl alcohol: \(K = 26\)
  • Cylinder separation: \(d = 0.5\ \text{cm} = 0.005\ \text{m}\)
  • Average radius: \(R = 5.75\ \text{cm} = 0.0575\ \text{m}\)
  • Maximum level (length): \(L = 5\ \text{m}\)

Area of full cylinder wall:

\[ A = 2\pi R L \]

Tasks: Find capacitance range from empty (air only) to full (alcohol only).

Example 4 – Solution

Compute area:

\[ A = 2\pi (0.0575\ \text{m})(5\ \text{m}) = 1.806\ \text{m}^2 \]

Capacitance in air:

\[ C_\text{air} = K \varepsilon_0 \frac{A}{d} = (1)(8.85\ \mathrm{pF/m})\frac{1.806}{0.005} \]

\[ C_\text{air} \approx 3196\ \text{pF} \approx 0.0032\ \mu\text{F} \]

With ethyl alcohol (full):

\[ C_\text{EtOH} = 26 \times C_\text{air} \approx 26 \times 0.0032\ \mu\text{F} = 0.0832\ \mu\text{F} \]

Range: \(0.0032\) to \(0.0832\ \mu\text{F}\) as level goes from 0 to 5 m.

3. Strain & Stress – Why ECE Cares

Strain sensors show up inside many secondary devices:

  • Pressure sensors: diaphragm strain under pressure
  • Load cells: strain in beams due to weight or force
  • Flow sensors: deflection of elements exposed to fluid flow
  • Accelerometers: proof mass bending a beam (a small weight is attached to a cantilever beam)

If you understand stress → strain → resistance change, you can interpret many transducers.

3.1 Stress and Strain – Definitions

Stress: internal “force per area” in a material

\[ \text{Stress} = \frac{F}{A} \quad [\mathrm{N/m^2}] \]

Strain: normalized deformation (dimensionless)

  • Tensile/compressive strain: \[\text{Strain} = \frac{\Delta l}{l}\]
  • Shear strain: \[\text{Shear strain} = \frac{\Delta x}{l}\]

Types:

  1. Tensile (pulling)
  2. Compressive (pushing)
  3. Shear (sliding layers)

Tensile and Compressive Stress/Strain

Tensile:

  • Forces pull the rod apart

  • Stress: \[\sigma = \frac{F}{A}\]

  • Strain: \[\epsilon = \frac{\Delta l}{l}\]

Figure 12a Tensile stress on a rod.

Compressive:

  • Forces push inward
  • Same formulas, but \(\Delta l\) is negative
  • Often written as compressive stress, compressive strain

Figure 12b Compressional stress on a rod.

Stress units: \(\mathrm{N/m^2}\) (also called Pa, Pascal).

Shear Stress and Strain

Shear stress comes from a force couple that tries to slide one face relative to the other.

Stress:

\[ \tau = \frac{F}{A} \]

Figure 13a Shear stress from a couple.

Shear strain is the lateral displacement normalized by thickness:

\[ \gamma = \frac{\Delta x}{l} \]

Figure 13b Shear deformation.

Stress–Strain Curves & Young’s Modulus

Figure 14 Typical stress–strain curve.

Key regions:

  • Linear (elastic) region: stress ∝ strain
  • Elastic limit: beyond which permanent deformation occurs
  • Necking → eventual fracture

In the linear region, we define:

\[ E = \frac{\text{stress}}{\text{strain}} = \frac{F/A}{\Delta l / l} \quad [\mathrm{N/m^2}] \]

\(E\) is Young’s modulus (tensile/compressive).

Similarly for shear:

\[ M = \frac{\text{shear stress}}{\text{shear strain}} = \frac{F/A}{\Delta x/l} \]

Modulus of Elasticity – Typical Values

Table 1: Young’s modulus \(E\)

Material Modulus (\(\mathrm{N/m^2}\))
Aluminum \(6.89 \times 10^{10}\)
Copper \(11.73 \times 10^{10}\)
Steel \(20.70 \times 10^{10}\)
Polyethylene plastic \(3.45 \times 10^{8}\)

Soft materials (plastics) have much lower \(E\) → large strain for small stress.

Example – Strain in an Aluminum Beam

Problem:

Find the strain resulting from a tensile force of \(1000\ \mathrm{N}\) applied to a 10‑m aluminum beam with cross‑sectional area \(A = 4\times10^{-4}\ \mathrm{m^2}\).

Solution:

From table: \(E = 6.89\times10^{10}\ \mathrm{N/m^2}\).

Using

\[ E = \frac{F/A}{\Delta l / l} \Rightarrow \epsilon = \frac{\Delta l}{l} = \frac{F}{EA} \]

Compute:

\[ \epsilon = \frac{10^3}{(6.89\times10^{10})(4\times10^{-4})} \approx 3.63\times10^{-5} \]

In “micros”:

  • \(3.63\times10^{-5} = 36.3\times10^{-6}\)\(36.3\ \mu\mathrm{m/m}\)

Strain Units in Practice

Strain is dimensionless, but we usually express as:

  • \(\mu\mathrm{m/m}\) (“microstrain”)
  • \(\mu\mathrm{in/in}\)

Conversion:

  • \(1\ \mu\text{strain} = 1\times10^{-6}\) strain
  • Typical engineering strains: 1–2000 \(\mu\text{strain}\)

Engineers often say simply “micros”, e.g., “1450 micros” meaning \(1450\ \mu\mathrm{m/m}\).

3.2 Strain Gauge Principle – Resistance vs Strain

For a metal wire:

\[ R_0 = \rho \frac{l_0}{A_0} \]

Under tensile stress:

  • Length increases: \(l = l_0 + \Delta l\)
  • Cross‑sectional area decreases: \(A = A_0 - \Delta A\)

Assuming volume is approximately constant:

\[ V = l_0 A_0 = (l_0 + \Delta l)(A_0 - \Delta A) \]

New resistance:

\[ R = \rho \frac{l_0 + \Delta l}{A_0 - \Delta A} \]

With some algebra and approximation, we get:

\[ R \approx \rho \frac{l_0}{A_0} \left( 1 + 2\frac{\Delta l}{l_0} \right) \]

So change in resistance:

\[ \Delta R \approx 2R_0 \frac{\Delta l}{l_0} \]

Conclusion: \(\Delta R\) is proportional to strain \(\left(\dfrac{\Delta l}{l_0}\right)\).

Example – Resistance Change for Given Strain

Problem:

Find the approximate change in resistance of a metal wire with \(R_0 = 120\ \Omega\) that experiences a strain of \(1000\ \mu\mathrm{m/m} = 10^{-3}\).

Solution:

Using

\[ \Delta R \approx 2R_0\frac{\Delta l}{l_0} \]

\[ \Delta R \approx 2 \times 120\ \Omega \times 10^{-3} = 0.24\ \Omega \]

So a 0.24 Ω change on top of 120 Ω – about 0.2%.

Temperature Effects on Strain Gauges

Problem: metals have significant temperature coefficients of resistance:

  • \(\alpha \approx 0.004/^\circ\mathrm{C}\)

Temperature effect on resistance:

\[ R(T) = R(T_0)[1 + \alpha \Delta T] \Rightarrow \Delta R_T = R_0 \alpha \Delta T \]

Example:

  • \(R_0 = 120\ \Omega\)
  • \(\Delta T = 1^\circ\mathrm{C}\)
  • \(\alpha = 0.004/^\circ\mathrm{C}\)

Then

\[ \Delta R_T = 120\times 0.004 \times 1 = 0.48\ \Omega \]

Compare with 0.24 Ω due to strain in previous example → temperature effect is actually bigger than strain effect!

Hence: we need temperature compensation in our strain gauge circuits.

3.3 Metal Strain Gauges – Gauge Factor

The approximate relation \(\Delta R \approx 2R_0\epsilon\) is not exact, so we define:

\[ \mathrm{GF} = \frac{\Delta R / R}{\text{strain}} = \frac{\Delta R / R}{\Delta l / l} \]

For metal strain gauges:

  • GF ≈ 2 (slightly above or below depending on alloy)

Higher GF → larger \(\Delta R\) for same strain → easier measurement.

Example: If GF = 2.03 and strain = \(1450\ \mu\mathrm{m/m}\):

\[ \frac{\Delta R}{R} = \mathrm{GF}\cdot\epsilon = 2.03 \times 1450\times10^{-6} \]

Metal Strain Gauge Construction

Figure 15 Metal foil strain gauge.

Features:

  • Thin metal foil (or wire) patterned into a meander to:
    • Increase effective length (higher resistance)
    • Make gauge sensitive in one direction (along the pattern)
  • Bonded to a backing (carrier) that is glued to the test object
  • Available nominal resistances: 60, 120, 240, 350, 500, 1000 Ω (120 Ω common)

Strain along the gauge axis changes resistance; strain perpendicular tends to “unfold” pattern → little effect.

Strain Gauge Signal Conditioning – The Wheatstone Bridge

Two main challenges:

  1. Very small fractional resistance changes (e.g., \(2\times10^{-6}\))
  2. Temperature‑induced resistance changes must be canceled

Solution: Wheatstone bridge circuits with:

  • One or more “active” gauges (sense strain)
  • “Dummy” gauges for temperature compensation

Figure 16a One‑arm bridge with dummy gauge.

Figure 16b Dummy gauge bonded in insensitive orientation.

One‑Arm Bridge – Sensitivity Derivation

Assume:

  • All bridge resistors \(R_1, R_2, R_D\) (dummy) are \(R\)
  • Active gauge resistance: \(R_A = R(1 + \Delta R/R)\)

Bridge offset voltage:

\[ \Delta V = V_s\left[\frac{R_D}{R_D + R_1} - \frac{R_A}{R_A + R_2}\right] \]

With algebra and assuming \(\Delta R/R \ll 1\):

\[ \Delta V \approx -\frac{V_s}{4}\frac{\Delta R}{R} \]

Using GF definition:

\[ \Delta V = -\frac{V_s}{4}\,\mathrm{GF}\,\frac{\Delta l}{l} \tag{14} \]

So bridge output is linear in strain.

Example 7 – One‑Arm Bridge with Temperature Compensation

Given:

  • GF = 2.03, \(R_A = R_D = R_1 = R_2 = 350\ \Omega\)
  • Strain = \(1450\ \mu\mathrm{m/m} = 1.45\times10^{-3}\) (tensile)
  • \(V_s = 10.0\ \text{V}\)

Tasks:

  1. Find change in \(R_A\).
  2. Find bridge offset voltage.
  3. Sensitivity in \(\mu\text{V}\) per microstrain.

Solution:

  1. From GF definition:

\[ \Delta R = \mathrm{GF} \cdot \epsilon \cdot R = 2.03 \cdot 1.45\times10^{-3} \cdot 350 \approx 1.03\ \Omega \]

So \(R_A \approx 351\ \Omega\).

  1. Bridge off‑null voltage (exact calculation):

\[ \Delta V = V_s\left[\frac{350}{350+350} - \frac{351}{351+350}\right] = 10\left[0.5 - \frac{351}{701}\right] \approx -7\ \text{mV} \]

  1. From Equation (14):

\[ \Delta V = -\frac{10}{4} \cdot 2.03\,\epsilon = -5.075\,\epsilon \]

For 1 microstrain (\(\epsilon = 10^{-6}\)):

\[ \Delta V \approx -5.075\times10^{-6}\ \text{V} = -5.08\ \mu\text{V} \]

(NB: the textbook states \(10.15\ \mu\text{V}\); that corresponds to a slightly different coefficient, but the order of magnitude is what matters.)

Two‑Arm and Four‑Arm Bridges

  • Two‑arm bridge: two active gauges in bridge, two dummies.

    • Sensitivity doubles:

    \[ \Delta V = \frac{V_s}{2}\mathrm{GF}\,\frac{\Delta l}{l} \tag{15} \]

  • Four‑arm bridge: all four resistors are active gauges, arranged so that two are in tension, two in compression.

    • Temperature compensation and further sensitivity gain.

Application example: cantilever beam with four gauges:

Figure 17 Strain gauges on a cantilever beam.
  • Top surface: tension when beam deflects downward
  • Bottom surface: compression
  • Dummies placed so they see same temperature but no strain

Example – Bridge Wiring for Beam Bending

We want bridge output to increase with downward deflection.

Connect gauges so that:

  • Tension gauge increases resistance (top active)
  • Compression gauge decreases resistance (bottom active)
  • Their effects add in the bridge output.

Resulting connection (conceptually):

Figure 18 Bridge wiring for cantilever beam gauges.

Typical implementation uses:

  • 2 active gauges in positions where strain is highest
  • 2 dummies oriented for temperature compensation only

3.4 Semiconductor Strain Gauges

Semiconductor (e.g., silicon) gauges:

  • Operate on piezoresistive effect: strain changes carrier mobility and resistivity
  • Both geometry and resistivity change with strain
  • Typically much higher GF:
    • GF can be −50 to −200 (magnitude)
  • Often negative GF: resistance decreases under tensile strain
  • Strongly nonlinear GF vs. strain

Appearance:

Figure 19 Semiconductor strain gauge.

Need calibration curves or lookup tables: GF is not constant over strain range.

Example 9 – Metal vs Semiconductor GF

Compare resistance change for strain \(\epsilon = 150\ \mu\mathrm{m/m} = 0.15\times10^{-3}\), both with \(R_0 = 120\ \Omega\).

GF definition:

\[ \mathrm{GF} = \frac{\Delta R / R}{\epsilon} \Rightarrow \Delta R = \mathrm{GF} \cdot \epsilon \cdot R \]

  1. Metal gauge, GF = 2.13:

\[ \Delta R = 2.13\times 0.15\times10^{-3}\times 120 = 0.038\ \Omega \]

  1. Semiconductor gauge, GF = −151:

\[ \Delta R = -151\times 0.15\times10^{-3}\times 120 = -2.72\ \Omega \]

Takeaway: semiconductor gauge response is ~70× larger (and opposite sign).

3.5 Load Cells – From Strain to Force/Weight

Load cell: a transducer that measures force or weight via strain.

  • Often an elastic element (beam, column, yoke) with multiple strain gauges bonded.
  • Gauges connected in a bridge: measure deformation due to applied load.
  • Factory calibration maps bridge output voltage → force/weight.
  • Can measure forces up to several mega‑newtons.

Common use:

  • Hopper and silo weight measurement
  • Industrial scales
  • Test rigs measuring tensile/compressive loads

Example 10 – Simple Load Cell Analysis

We have:

  • Aluminum post, radius \(r = 2.500\ \text{cm} = 0.0250\ \text{m}\)
  • Load: 0 to \(5000\ \text{lb}\)
  • Strain gauges: \(R = 120\ \Omega\), GF = 2.13
  • Bridge: one active, one dummy (Figure 16 type)
  • \(R_1 = R_2 = R_D = 120\ \Omega\)
  • Supply \(V_s = 2\ \text{V}\)

Find \(\Delta V\) vs load from 0 to \(5000\ \text{lb}\).

Example 10 – Solution Steps

  1. Convert load to SI:

\[ F = \frac{5000\ \text{lb}}{0.2248\ \text{lb/N}} \approx 22240\ \text{N} \]

  1. Cross‑section area of post:

\[ A = \pi r^2 = \pi (0.025)^2 \approx 1.963\times10^{-3}\ \mathrm{m^2} \]

  1. From table: \(E_\text{Al} = 6.89\times10^{10}\ \mathrm{N/m^2}\)

  2. Strain at 5000 lb:

\[ \epsilon = \frac{\Delta l}{l} = \frac{F}{EA} = \frac{22240}{(6.89\times10^{10})(1.963\times10^{-3})} \approx 1.644\times10^{-4} = 164.4\ \mu\mathrm{m/m} \]

  1. Fractional resistance change using GF:

\[ \frac{\Delta R}{R} = \mathrm{GF}\,\epsilon = 2.13 \times 1.644\times10^{-4} = 3.502\times10^{-4} \]

So \(\Delta R = 120 \times 3.502\times10^{-4} \approx 0.0420\ \Omega\).

  1. Because this is compression, \(R_A\) decreases to about \(119.958\ \Omega\).

  2. Bridge off‑null voltage:

\[ \Delta V = V_s\left[\frac{120}{120+120} - \frac{119.958}{119.958+120}\right] \approx 2\left[0.5 - \frac{119.958}{239.958}\right] \approx 175\ \mu\mathrm{V} \]

So as force ranges from 0 to 5000 lb, \(\Delta V\) goes from 0 to about \(175\ \mu\text{V}\).

Note: That is a very small signal → requires amplification.

Load Cell Practical Considerations

The simple post in Example 10 has issues:

  • Real loads may cause bending or off‑axis forces → different strain on each side.
  • Uneven loading causes measurement errors.

Practical load cells use specific structure to:

  • Concentrate strain where gauges are mounted
  • Make strain field more uniform and predictable
  • Minimize sensitivity to side loads and bending moments

Result: more accurate, robust force measurement.

Key Formulas Summary

Capacitive sensors

  • Parallel plate: \[C = K\varepsilon_0\frac{A}{d}\]

Strain gauges

  • Approximate metal gauge relation: \[\Delta R \approx 2R_0\epsilon\]
  • Gauge factor: \[\mathrm{GF} = \frac{\Delta R / R}{\epsilon}\]
  • One‑arm bridge output (small strain): \[\Delta V \approx -\frac{V_s}{4}\,\mathrm{GF}\,\epsilon\]
  • Two‑arm bridge: \[\Delta V \approx \frac{V_s}{2}\,\mathrm{GF}\,\epsilon\]

Stress & strain

  • Tensile/compressive stress: \[\sigma = \frac{F}{A}\]
  • Tensile/compressive strain: \[\epsilon = \frac{\Delta l}{l}\]
  • Shear stress: \[\tau = \frac{F}{A}\]
  • Shear strain: \[\gamma = \frac{\Delta x}{l}\]
  • Young’s modulus (tension/compression): \[E = \frac{\sigma}{\epsilon} = \frac{F/A}{\Delta l/l}\]
  • Shear modulus: \[M = \frac{\tau}{\gamma}\]

Summary / Key Points

  1. Displacement sensors
    • Potentiometric sensors are simple but suffer from wear and limited resolution.
    • Capacitive and inductive sensors provide non‑contact measurements with better durability and sensitivity.
    • LVDTs are industry‑standard for linear displacement with excellent linearity and resolution.
  2. Level sensors
    • Many physical principles can be used: floats, capacitance, ultrasonics, and pressure.
    • Capacitive and ultrasonic methods allow non‑contact or non‑intrusive level measurement.
  3. Strain and stress
    • Stress (force/area) and strain (relative deformation) are fundamental to many transducers.
    • Young’s modulus links stress and strain in the elastic region.
  1. Strain gauges
    • Metal gauges use resistance change to measure strain; GF ≈ 2.
    • Semiconductor gauges offer much higher GF but are nonlinear and more temperature‑sensitive.
    • Wheatstone bridges with dummy gauges are crucial for sensitivity and temperature compensation.
  2. Load cells
    • Use strain gauges on mechanical elements to convert force/weight into an electrical signal.
    • Output signals are typically in the microvolt to millivolt range and must be amplified.

Interactive Deck

1. Potentiometric Displacement Sensor – Direct Computation

Use this block to explore how a linear potentiometric sensor maps displacement → resistance → output voltage using the Example 1 circuit (inverting amplifier).

Assumptions:

  • Displacement range: 0 to 10 cm
  • Resistance range: 0 to 1000 Ω (linear)
  • \(V_\text{in} = -5.1\ \mathrm{V}\), \(R_1 = 510\ \Omega\), \(R_2 = R_\text{sensor}\)

Try different x_cm values and observe the linearity in \(V_\text{out}\).

2. Potentiometer – Interactive Transfer Curve (OJS + Pyodide + Plotly)

Use the sliders to explore how the potentiometric sensor behaves over its range.

Use this to see how changing \(R_\text{max}\), \(V_\text{in}\), or \(R_1\) changes the slope of the transfer function.

3. Capacitive Sensor – Cylinder Overlap (Example 2)

Compute capacitance for the cylindrical sensor of Example 2 as a function of overlap height \(h\).

Parameters (fixed from the example):

  • \(K = 2.5\)
  • \(\varepsilon_0 = 8.85\ \mathrm{pF/m}\)
  • \(r = 2.5\ \mathrm{cm}\)
  • \(d = 1\ \mathrm{mm}\)

Change h_cm and verify the linear relation between \(h\) and \(C\).

4. Capacitive Sensor – Interactive Sensitivity Plot

Use sliders to explore sensitivity \(\dfrac{dC}{dh}\) and the capacitance vs. overlap height.

Experiment with \(K\), \(r\), and \(d\) to see how they affect sensor sensitivity.

5. Stress–Strain Calculator for a Rod

Compute tensile strain for a rod given force, cross‑section area, and Young’s modulus.

Modify F_N, A_m2, or E to see how the strain changes.

6. Stress–Strain Interactive Plot (Material Comparison)

Pick a material and force, and see the resulting strain for a given geometry.

Compare different materials to see which deforms more under the same load.

7. Metal Strain Gauge – ΔR from Strain

Use this block to compute the resistance change of a metal gauge given strain and GF.

Change strain_micro or GF to see sensitivity.

8. Strain Gauge Bridge – One‑Arm Output vs Strain

Now visualize how the one‑arm Wheatstone bridge output depends on strain.

We use:

\[ \Delta V \approx -\frac{V_s}{4}\,\mathrm{GF}\,\epsilon \]

Observe how increasing \(V_s\) or GF increases the signal.

9. Semiconductor vs Metal Strain Gauge – ΔR Comparison

Interactively compare resistance changes for metal vs semiconductor gauges.

Notice how the semiconductor gauge produces a much larger (and often negative) ΔR.

10. Load Cell – Strain and Bridge Output vs Load (Example 10‑Style)

Explore how a simple compressive load cell responds to load up to 5000 lb.

Explore how changing radius, GF, or supply voltage affects sensitivity.

11. Summary Interactive Reflection

Use this quick computation to connect multiple ideas:

  • Choose a material (for Young’s modulus)
  • Choose force and dimensions
  • Compute strain, then ΔR of a gauge, then bridge output.

Try different combinations until you can mentally predict the trend before running the code. This is the core of building engineering intuition.